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In Situ Wired Wafer Temperature Measurement

RTD Wafer In Situ Wired Wafer Temperature Measurement

RTD Wafer In Situ Wired Wafer Temperature Measurement

Instrumented wafers are used in semiconductor processing equipment where it is critical to understand and control the temperature at the wafer surface.

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Specifications

Temperature measurement range: -40 ℃ to 250 ℃

Resistors: Thin film platinum

Resistance: nominal resistance at 0 ℃ is 1000Ω

Accuracy: ± 0.1 ℃

Temperature measurement points: 1-68

Sensor lead: customizable

Insulations available: polyimide coated copper leads

Temperature probe interface: DB37

Wafer material: silicon wafer, sapphire, silicon carbide, etc. (substrate shape and size can be customized)

Wafer size: 50mm, 100mm, 150mm, 200mm, 300mm

Vacuum feedthrough: polyimide flat cable, atmospheric to 10-7 Torr capable, length designated by customer.

 

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