RTD Wafer In Situ Wired Wafer Temperature Measurement
Instrumented wafers are used in semiconductor processing equipment where it is critical to understand and control the temperature at the wafer surface.
Specifications
Temperature measurement range: -40 ℃ to 250 ℃
Resistors: Thin film platinum
Resistance: nominal resistance at 0 ℃ is 1000Ω
Accuracy: ± 0.1 ℃
Temperature measurement points: 1-68
Sensor lead: customizable
Insulations available: polyimide coated copper leads
Temperature probe interface: DB37
Wafer material: silicon wafer, sapphire, silicon carbide, etc. (substrate shape and size can be customized)
Wafer size: 50mm, 100mm, 150mm, 200mm, 300mm
Vacuum feedthrough: polyimide flat cable, atmospheric to 10-7 Torr capable, length designated by customer.
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